Applications : Field Emission Scanning Electron Microscopes (FE-SEM) : Hitachi High-Tech GLOBAL
Model: S-4800
A deceleration technology uses a deceleration voltage (Vd) applied to the specimen and decelerate the accelerating voltage. As illustrated in Fig. 1, the primary electron beam accelerated by an accelerating voltage (Vacc) is decelerated by a deceleration voltage applied to the specimen. The beam strikes the specimen at a landing voltage (Vi) which is a function of (Vacc-Vd). When a deceleration technology is incorporated as an option, the S-4800 allows a landing voltage (Vi) as low as 100V. It allows microscopy at a minimized damage rate or observation of topmost specimen surfaces. We report on some initial applications for advanced materials.
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Model: S-4800, FB-2100
The S-4800 Field Emission Scanning Electron Microscope (FE-SEM) has been developed with a snorkel objective lens in response to user requirements for better imaging resolution, acquisition of specimen information suitable for multiple evaluation purpose and minimized specimen damage. The S-4800 has been utilized in leading edge technologies such as semiconductors and advanced materials. SEM applications are not limited to surface topography of specimens, but SEMs can also be used for observation of thinned specimens and inner structures of fine particles such as carbon nanotubes. For observation of inner structures, a technique called STEM (Scanning Transmission Electron Microscopy) is employed. It utilizes electrons which have transmitted through the specimen. Conventional STEM techniques with SEMs using out-lenses or snorkel lenses have used electrons which have transmitted through the specimen as shown in Fig. 1. This imaging technique is generally called bright field STEM. Transmitted electrons include not only bright field signals but also scattered electrons generated in the specimen. The imaging technique using these scattered electrons is called dark field STEM. In the dark field image, Z-contrast which reflect compositions in the specimen is made available. Here in this Technical Data, we introduce a new dark field STEM function which is available as an option for the S-4800. We also introduce some applications of the dark field STEM function.
Model: S-4300SE/N
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Scanning Electron Microscopes (SEM) operating with Schottky Emission (SE) sources allow large beam currents and good stability over long periods of time. They have been used for material analysis applications coupled with various analytical accessories. Electron Back-Scattered Diffraction (EBSD) used for analysis of crystal orientations is one such application. Quality of EBSD data is significantly affected by surface conditions of the specimen. Non-conductive specimens are generally carbon or metal coated to prevent charging artifacts. However, carbon coating absorbs backscattered electrons and makes the EBSD pattern intensity weak. We have tested EBSD measurements in variable pressure mode, without specimen coating, using the S-4300SE/N SEM. Fig. 1 shows a general view of the instrument. We have used a high sensitivity CCD-camera mounted INCA CRYSTAL (Oxford) EBSD detector. We report here on the result.
Model: S-4800
The S-4700 FE-SEM with a Snorkel type objective lens has been the need for high resolution with large samples, particularly in the field of materials science applications including semiconductor and electronic devices. Semiconductor devices are moving toward higher circuit integration and density, higher operating speed, and minimum operating power consumption as well as advanced new materials. They require SEMs to achieve higher resolution, acquire optimum signals for specific purposes of evaluation, and establish low dose microscopy techniques.The S-4800 has been developed to respond to the above user requirements.We report on functions, performance and some applications of the S-4800. Fig. 1 shows a general view of the S-4800.
Model: S-3000N, S-3500N, S-4300SE/N
SEMs have been used for the evaluation of minute materials and have become an important tool for research and development in various fields of science and industry. Variable Pressure SEMs (VP-SEMs) in particular, allow observation of insulating materials and water or oil containing samples without sputter coating. They have been used in a variety of fields such as biology food science, and quality control of electronic components. Until recently, the Backscattered Electrons Detector (BSED) has been the primary detector used for sample observation using the VP-SEMs. Now, with the development of the Environmental Secondary Electron Detector (ESED), it has become possible to use secondary electrons for sample observation. ESED imaging with the VP-SEM allows visualization of surface morphology at higher magnifications than the BSE image. Utilizing the combination of the Hitachi VP-SEMs, and ESED we have imaged various functional film samples. The results are reported below in detail. The functional film samples that we imaged were taken from those commonly used in our daily lives. They range from films used for wrapping foods, daily consumables, and materials for electronic components as well as those used in agriculture. These films are tailored to specific functions such as luminescence, fireproofing and, anti-fogging, by blending fine particles in basic resins.SEM observation of resin samples usually requires that the sample be metal coated for electrical conductivity prior to observation. However, when a resin sample is coated problems such as sample deformation can occur due to the heat generated in the coating process. The advent of the VP-SEMs now allows direct microscopy of resin samples without the need of metal coating, thus no artifact is imparted.
Model: S-5200
Various combinations of materials which have different compositions or hardness have been studied for development of advanced (functional) new materials. For microscopy of these materials, specimen preparation is a mandatory requirement. In addition to conventional ultra-microtomes, focused ion beam (FIB) systems have been extensively used. The FIB systems are advantageous in that they allow specimen preparation without giving mechanical forces to the specimen. A low voltage scanning transmission electron microscopy technique has been applied for observation of high polymer materials and it has been proved to be useful due to high angle scattering of electrons which allow good imaging contrast. This technique has also been used for microscopy of semiconductor devices in combination with FIB systems and microscopy of biological sections. We have studied some functional compound materials including high polymer or organic materials using the S-5200 ultra-high resolution SEM. We report here on some microscopy results of inner structures made visible with the low voltage STEM technique.
Model: S-5200
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A low voltage STEM technique using a scanning electron microscope (SEM) allows high contrast images owing to high electron scattering and making visible subtle changes of densities and compositions in specimen structures. This technique has long been used for microscopy of unstained polymers. Recently, this technique has been used also for semiconductor materials associated with specimen preparation using FIB systems. TEM technique has been playing a leading role for microscopy of biological sections. We have used the S-5200 ultra-high resolution scanning microscope with STEM attachment for microcopy of biological sections. We have examined if it is possible to observe biological sections with good imaging contrast. We have also studied X-ray microanalysis of unstained sections. We report here on some of our initial results.
— FEATURES AND SOME APPLICATIONS —
Model: S-5200
Field emission SEMs have been extensively used for process evaluation, particle analysis and CD-measurement in the semiconductor industry. Associated with higher integration and density, however, new technologies such as copper wiring, ArF laser lithography, etc. have been introduced in the processing. Development of new SEMs that have better resolving power than most conventional SEMs has, therefore, been required by the industry for quick evaluation of process conditions.Fig. 1 shows a general view of the new S-5200 UHR FESEM. It has an ultra-high resolution objective lens, enhanced mechanical/electrical stability and improved specimen contamination rate. Thanks to these technological innovations the S-5200 has a guaranteed ultra-high resolution of 0.5 nm (at 30 kV) which is the best in the world. In addition, the S-5200 has a selectable signal detection mode allowing detection of secondary electrons (primarily for topographic information), backscattered electrons (BSE) for composition information, or a combination of these electron signals for optimized image contrast which will suit the specimen or the purpose of microscopy. We report here on the functions, performance and some applications as well as how to use the selectable signal detection mode.
Model: S-4700
Cyrogenic scanning electron microscopy allows observation of water-containing samples in a frozen condition that permits sample morphology to be maintained in high vaccum conditions and close to their natural state. This technique has been widely used in food, biology and pharmaceutical fields for a long time. Recently it has been applied for high resolution cryogenic microscopy of protein particles. We have tested the capabilities of the S-4700 coupled with an Oxford cryogenic system using yeast, colloid and other samples. The S-4700 has a snorkel objective lens and achieves a high resolution of 2.1 nm at a low operating voltage of 1 kV. The Oxford cryogenic system allows operation of the S-4700 at short working distances that are preferred for high resolution work. We report here on the features of this combined system and some initial applications.
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