Samsung SSD 860 EVO | Samsung V-NAND Consumer SSD


  • Form Factor
  • 2.5 inch, mSATA, M.2
  • Capacity
  • 250GB, 500GB, 1,000GB, 2,000GB, 4,000GB
  • Sequential Read Speed
  • Up to 550 MB/sec
  • Sequential Write Speed
  • Up to 520 MB/sec

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Model Code (Capacity)1)

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  • MZ-76E250BW (250GB)

  • MZ-76E500BW (500GB)

  • MZ-76E1T0BW (1,000GB)

  • MZ-76E2T0BW (2,000GB)

  • MZ-76E4T0BW (4,000GB)

General Feature

  • Application

    Client PCs

  • FORM FACTOR

    2.5 inch

  • INTERFACE

    SATA 6 Gb/s

    (compatible with SATA 3 Gb/s & SATA 1.5 Gb/s)

  • DIMENSION (WxHxD)

    100 X 69.85 X 6.8 (mm)

  • WEIGHT

    250GB, 500GB: Max 50.0 g

    1,000GB: Max 51.0 g

    2,000GB: Max 60.0 g

    4,000GB: Max 62.0 g

  • STORAGE MEMORY

    Samsung V-NAND 3bit MLC

  • CONTROLLER

    Samsung MJX Controller

  • CACHE MEMORY

    512MB Low Power DDR4 SDRAM

    (250GB, 500GB)

    1GB Low Power DDR4 SDRAM (1,000GB)

    2GB Low Power DDR4 SDRAM (2,000GB)

    4GB Low Power DDR4 SDRAM (4,000GB)

Special Feature

  • TRIM Support

    Yes

  • S.M.A.R.T Support

    Yes

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)

  • WWN SUPPORT

    Yes

  • DEVICE SLEEP MODE SUPPORT

    Yes

Performance2)

  • SEQUENTIAL READ

    Up to 550 MB/s

  • SEQUENTIAL WRITE

    Up to 520 MB/s

  • RANDOM READ (4KB, QD32)

    Up to 98,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    Up to 90,000 IOPS

  • RANDOM READ (4KB, QD1)

    Up to 10,000 IOPS

  • RANDOM WRITE (4KB, QD1)

    Up to 42,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION

    (System Level)3)

    250GB: Average 2.2 W Maximum 4.0 W

    500GB: Average 2.5 W Maximum 4.0 W

    1,000GB: Average 3.0 W Maximum 4.0 W

    2,000GB: Average 3.0 W Maximum 4.0 W

    4,000GB: Average 3.0 W Maximum 4.0 W

    (Burst mode)

  • POWER CONSUMPTION (IDLE)3)

    Max. 50 mW

  • Power consumption (Device Sleep)

    Max. 2 mW

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  • ALLOWABLE VOLTAGE

    5V ± 5 % Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability

  • OPERATING TEMPERATURE

    0 – 70 ℃

  • Shock

    1,500 G & 0.5 ms (Half sine)

Warranty

  • MZ-76E250BW (250GB)

    5 Years or 150 TBW

  • MZ-76E500BW (500GB)

    5 Years or 300 TBW

  • MZ-76E1T0BW (1,000GB)

    5 Years or 600 TBW

  • MZ-76E2T0BW (2,000GB)

    5 Year or 1,200 TBW

  • MZ-76E4T0BW (4,000GB)

    5 Year or 2,400 TBW

  • 1) 1GB=1 Billionbyte by IDEMA. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise).
  • 2) Performance may vary based on system hardware & configuration
  • 3) Actual power consumption may vary depending on system hardware & configuration

SHOW MORE SPECS (mSATA) layer open

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Model Code (Capacity)1)

  • MZ-M6E250BW (250GB)

  • MZ-M6E500BW (500GB)

  • MZ-M6E1T0BW (1,000GB)

General Feature

  • Application

    Client PCs

  • FORM FACTOR

    mSATA

  • INTERFACE

    SATA 6 Gb/s

    (compatible with SATA 3 Gb/s & SATA 1.5 Gb/s)

  • DIMENSION (WxHxD)

    (29.85±0.15) x (50.80±0.15) x Max 3.85 (mm)

  • WEIGHT

    Max. 8.5 g

  • STORAGE MEMORY

    Samsung V-NAND 3bit MLC

  • CONTROLLER

    Samsung MJX Controller

  • CACHE MEMORY

    512MB Low Power DDR4 SDRAM

    (250GB, 500GB)

    1GB Low Power DDR4 SDRAM (1,000GB)

Special Feature

  • TRIM Support

    Yes

  • S.M.A.R.T Support

    Yes

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)

  • WWN SUPPORT

    Yes

  • DEVICE SLEEP MODE SUPPORT

    Yes

Performance2)

  • SEQUENTIAL READ

    Up to 550 MB/s

  • SEQUENTIAL WRITE

    Up to 520 MB/s

  • RANDOM READ (4KB, QD32)

    Up to 97,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    Up to 88,000 IOPS

  • RANDOM READ (4KB, QD1)

    Up to 10,000 IOPS

  • RANDOM WRITE (4KB, QD1)

    Up to 42,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION

    (System Level)3)

    250GB: Average 2.2 W Maximum 4.5 W

    500GB: Average 2.5 W Maximum 4.5 W

    1,000GB: Average 3.0 W Maximum 4.5 W

    (Burst mode)

  • POWER CONSUMPTION (IDLE)3)

    Max. 50 mW

  • Power consumption (Device Sleep)

    Max. 2 mW

  • ALLOWABLE VOLTAGE

    3.3V ± 5 % Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability

  • OPERATING TEMPERATURE

    0 – 70 ℃

  • Shock

    1,500 G & 0.5 ms (Half sine)

Warranty

  • MZ-M6E250BW (250GB)

    5 Years or 150 TBW

  • MZ-M6E500BW (500GB)

    5 Years or 300 TBW

  • MZ-M6E1T0BW (1,000GB)

    5 Years or 600 TBW

  • 1) 1GB=1 Billionbyte by IDEMA. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise).
  • 2) Performance may vary based on system hardware & configuration
  • 3) Actual power consumption may vary depending on system hardware & configuration

Show More Specs (M.2) layer open

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MORE SPECS

Model Code (Capacity)1)

  • MZ-N6E250BW (250GB)

  • MZ-N6E500BW (500GB)

  • MZ-N6E1T0BW (1,000GB)

  • MZ-N6E2T0BW (2,000GB)

General Feature

  • Application

    Client PCs

  • FORM FACTOR

    M.2

  • INTERFACE

    SATA 6 Gb/s

    (compatible with SATA 3 Gb/s & SATA 1.5 Gb/s)

  • DIMENSION (WxHxD)

    Max 80.15 x 22.15 x 2.38 (mm)

  • WEIGHT

    Max. 8.0 g

  • STORAGE MEMORY

    Samsung V-NAND 3bit MLC

  • CONTROLLER

    Samsung MJX Controller

  • CACHE MEMORY

    512MB Low Power DDR4 SDRAM

    (250GB, 500GB)

    1GB Low Power DDR4 SDRAM (1,000GB, 2,000GB)

Special Feature

  • TRIM Support

    Yes

  • S.M.A.R.T Support

    Yes

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)

  • WWN SUPPORT

    Yes

  • DEVICE SLEEP MODE SUPPORT

    Yes

Performance2)

  • SEQUENTIAL READ

    Up to 550 MB/s

  • SEQUENTIAL WRITE

    Up to 520 MB/s

  • RANDOM READ (4KB, QD32)

    Up to 97,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    Up to 88,000 IOPS

  • RANDOM READ (4KB, QD1)

    Up to 10,000 IOPS

  • RANDOM WRITE (4KB, QD1)

    Up to 42,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION

    (System Level)3)

    250GB: Average 2.2 W Maximum 4.0 W

    500GB: Average 2.5 W Maximum 4.0 W

    1,000GB: Average 3.0 W Maximum 4.5 W

    2,000GB: Average 3.0 W Maximum 4.5 W

    (Burst mode)

  • POWER CONSUMPTION (IDLE)3)

    Max. 50 mW

  • Power consumption (Device Sleep)

    Max. 2 mW

  • ALLOWABLE VOLTAGE

    3.3V ± 5 % Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability

  • OPERATING TEMPERATURE

    0 – 70 ℃

  • Shock

    1,500 G & 0.5 ms (Half sine)

Warranty

  • MZ-N6E250BW (250GB)

    5 Years or 150 TBW

  • MZ-N6E500BW (500GB)

    5 Years or 300 TBW

  • MZ-N6E1T0BW (1,000GB)

    5 Years or 600 TBW

  • MZ-N6E2T0BW (2,000GB)

    5 Years or 1,200 TBW

  • 1) 1GB=1 Billionbyte by IDEMA. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise).
  • 2) Performance may vary based on system hardware & configuration
  • 3) Actual power consumption may vary depending on system hardware & configuration

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